NTT2012N065M3S

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 20mA

Gate Charge (Qg) (Max) @ Vgs

135 nC @ 18 V

Vgs (Max)

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds

3610 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

429W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

112A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

16.8mOhm @ 40A, 18V

Mounting Type

Surface Mount

Supplier Device Package

T2PAK

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), Variant

Packaging

Tape & Reel (TR); Cut Tape (CT)