Component information
NTTFS080N10GTAG
NTTFS080N10GTAG component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 22µA
- Mfr
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 8.6 nC @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 560.5 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2.5W (Ta), 39W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 4.1A (Ta), 16A (Tc)
- Supplier Device Package
- 8-WDFN (3.3x3.3)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- 8-PowerWDFN
- Rds On (Max) @ Id, Vgs
- 72mOhm @ 4A, 10V
- Base Product Number
- NTTFS0
Documentation and references
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