NTTFS2D1N04HLTWG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

2V @ 120µA

Gate Charge (Qg) (Max) @ Vgs

43.6 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2745 pF @ 20 V

FET Type

N-Channel

Power Dissipation (Max)

2.2W (Ta), 83W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 23A, 10V

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (3.3x3.3)

Package / Case

8-PowerWDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NTTFS2