NVBG020N120SC1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

220 nC @ 20 V

Vgs (Max)

+25V, -15V

Input Capacitance (Ciss) (Max) @ Vds

2943 pF @ 800 V

Power Dissipation (Max)

3.7W (Ta), 468W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Grade

Automotive

Drain to Source Voltage (Vdss)

1200 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

8.6A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

28mOhm @ 60A, 20V

Vgs(th) (Max) @ Id

4.3V @ 20mA

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVBG020