NVBG022N120M3S

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

148 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds

3200 pF @ 800 V

Power Dissipation (Max)

234W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

FET Type

N-Channel

Grade

Automotive

Technology

SiCFET (Silicon Carbide)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

30mOhm @ 40A, 18V

Vgs(th) (Max) @ Id

4.4V @ 20mA

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVBG022