Component information
NVD5865NLT4G
NVD5865NLT4G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 29 nC @ 10 V
- Mfr
- onsemi
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1400 pF @ 25 V
- Part Status
- Obsolete
- Power Dissipation (Max)
- 3.1W (Ta), 71W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 60 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta), 46A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Supplier Device Package
- DPAK
- Rds On (Max) @ Id, Vgs
- 16mOhm @ 19A, 10V
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Base Product Number
- NVD586
Documentation and references
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