NVF6P02T3G

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Not For New Designs

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1200 pF @ 16 V

Power Dissipation (Max)

8.3W (Ta)

FET Type

P-Channel

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

20 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

50mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Mounting Type

Surface Mount

Supplier Device Package

SOT-223 (TO-261)

Package / Case

TO-261-4, TO-261AA

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVF6P02