Component information
NVJD4152PT1G
NVJD4152PT1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Gate Charge (Qg) (Max) @ Vgs
- 2.2nC @ 4.5V
- Manufacturer
- onsemi
- Input Capacitance (Ciss) (Max) @ Vds
- 155pF @ 20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 272mW (Ta)
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 P-Channel (Dual)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 20V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 880mA (Ta)
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Rds On (Max) @ Id, Vgs
- 260mOhm @ 880mA, 4.5V
- Supplier Device Package
- SC-88/SC70-6/SOT-363
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
Documentation and references
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