Component information
NVMD4N03R2G
NVMD4N03R2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- Manufacturer
- onsemi
- Input Capacitance (Ciss) (Max) @ Vds
- 400pF @ 20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 2W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 30V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Supplier Device Package
- 8-SOIC
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 4A, 10V
- Base Product Number
- NVMD4
- Vgs(th) (Max) @ Id
- 3V @ 250µA
Documentation and references
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