Component information
NVMD6P02R2G
NVMD6P02R2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Manufacturer
- onsemi
- Gate Charge (Qg) (Max) @ Vgs
- 35nC @ 4.5V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 1700pF @ 16V
- Part Status
- Obsolete
- Power - Max
- 750mW
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 P-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C
- 4.8A
- Supplier Device Package
- 8-SOIC
- Rds On (Max) @ Id, Vgs
- 33mOhm @ 6.2A, 4.5V
- Base Product Number
- NVMD6
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ