NVMFS6H800NT1G

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

85 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5530 pF @ 40 V

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

80 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 203A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 330µA

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVMFS6