NVMFWD040N10MCLT1G

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 50V

Power - Max

3.2W (Ta), 36W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

2 N-Channel (Dual)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.1A (Ta), 21A (Tc)

Rds On (Max) @ Id, Vgs

39mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3V @ 26µA

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVMFWD