NVMJS2D5N06CLTWG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

52 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600 pF @ 25 V

Power Dissipation (Max)

3.9W (Ta), 113W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

60 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

31A (Ta), 164A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 135µA

Mounting Type

Surface Mount

Supplier Device Package

8-LFPAK

Package / Case

SOT-1205, 8-LFPAK56

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVMJS2