Component information
NVMSD6N303R2G
NVMSD6N303R2G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 30 nC @ 10 V
- Mfr
- onsemi
- Input Capacitance (Ciss) (Max) @ Vds
- 950 pF @ 24 V
- Packaging
- Tape & Reel (TR)
- FET Feature
- Schottky Diode (Isolated)
- Part Status
- Obsolete
- Operating Temperature
- -55°C ~ 150°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 30 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Supplier Device Package
- 8-SOIC
- Rds On (Max) @ Id, Vgs
- 32mOhm @ 6A, 10V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Base Product Number
- NVMSD6
Documentation and references
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