NVMYS1D3N04CTWG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

75 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4855 pF @ 25 V

Power Dissipation (Max)

3.9W (Ta), 134W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

40 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

43A (Ta), 252A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 180µA

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVMYS1