NVMYS6D2N06CLTWG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400 pF @ 25 V

Power Dissipation (Max)

3.6W (Ta), 61W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

FET Type

N-Channel

Grade

Automotive

Technology

MOSFET (Metal Oxide)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 71A (Tc)

Rds On (Max) @ Id, Vgs

6.1mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2V @ 53µA

Gate Charge (Qg) (Max) @ Vgs

20 nC @ 10 V

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NVMYS6