NVNJWS200N031LTAG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

onsemi

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

1.4 nC @ 4.5 V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

89 pF @ 15 V

Power Dissipation (Max)

1.8W (Ta), 4.1W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Drain to Source Voltage (Vdss)

30 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta), 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3V, 4.5V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Mounting Type

Surface Mount, Wettable Flank

Supplier Device Package

3-XDFNW (1x1)

Package / Case

3-XFDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)