Component information
NVT2016N090M2
onsemi NVT2016N090M2: Single FETs, MOSFETs. Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant. Supplier Device Package: T2PAK.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- onsemi
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 250 nC @ 18 V
- Vgs (Max)
- +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds
- 5340 pF @ 450 V
- Power Dissipation (Max)
- 789W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 900 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 148A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 18V
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 60A, 18V
- Vgs(th) (Max) @ Id
- 4.3V @ 20mA
- Mounting Type
- Surface Mount
- Supplier Device Package
- T2PAK
- Package / Case
- TO-263-8, D2PAK (7 Leads + Tab), Variant
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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