NX1029XH

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Nexperia USA Inc.

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 4.5V, 0.35nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V, 36pF @ 25V

Power - Max

330mW (Ta), 1.09W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

N and P-Channel Complementary

Qualification

AEC-Q101

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

330mA (Ta), 170mA (Ta)

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

NX1029