Component information
NXH006P120M3F2PTHG
onsemi NXH006P120M3F2PTHG: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: 36-PIM (56.7x62.8).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.4V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs
- 622nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds
- 11914pF @ 800V
- Power - Max
- 556W (Tc)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 191A (Tc)
- Rds On (Max) @ Id, Vgs
- 8mOhm @ 100A, 18V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- 36-PIM (56.7x62.8)
- Packaging
- Tray
- Base Product Number
- NXH006
Documentation and references
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