Component information
NXH007F120M3F2PTHG
onsemi NXH007F120M3F2PTHG: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: 34-PIM (56.7x42.5).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.4V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs
- 407nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 9090pF @ 800V
- Power - Max
- 353W (Tj)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Configuration
- 4 N-Channel (Full Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 149A (Tc)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 120A, 18V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- 34-PIM (56.7x42.5)
- Packaging
- Tray
- Base Product Number
- NXH007
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ