Component information
NXH010P120M3F1PG
onsemi NXH010P120M3F1PG: FET, MOSFET Arrays. Package / Case: Module. Vgs(th) (Max) @ Id: 4.4V @ 45mA.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.4V @ 45mA
- Gate Charge (Qg) (Max) @ Vgs
- 314nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 6451pF @ 800V
- Power - Max
- 272W (Tj)
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Configuration
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 105A (Tc)
- Rds On (Max) @ Id, Vgs
- 14.5mOhm @ 90A, 18V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Packaging
- Tray
- Base Product Number
- NXH010
Documentation and references
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