NXH011F120M3F2PTHG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

onsemi

Part Status

Active

Vgs(th) (Max) @ Id

4.4V @ 60mA

Gate Charge (Qg) (Max) @ Vgs

284nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds

6211.6pF @ 800V

Power - Max

244W (Tj)

Technology

Silicon Carbide (SiC)

Operating Temperature

-40°C ~ 175°C (TJ)

Configuration

4 N-Channel (Full Bridge)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

105A (Tc)

Rds On (Max) @ Id, Vgs

16mOhm @ 100A, 18V

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

34-PIM (56.7x42.5)

Packaging

Tray

Base Product Number

NXH011