Component information
NXH015F120M3F1P1TG
onsemi NXH015F120M3F1P1TG: FET, MOSFET Arrays. Package / Case: Module. Supplier Device Package: 22-PIM (33.8x42.5).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Manufacturer
- onsemi
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4.4V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs
- 211nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds
- 4696pF @ 800V
- Power - Max
- 198W
- Technology
- Silicon Carbide (SiC)
- Operating Temperature
- -40°C ~ 175°C
- Configuration
- 4 N-Channel (Full Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C
- 77A
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 60A, 18V
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- 22-PIM (33.8x42.5)
- Packaging
- Tray
Documentation and references
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