Component information
NXH200B100H4F2SG-R
onsemi NXH200B100H4F2SG-R: IGBT Modules. Package / Case: Module. Supplier Device Package: 36-PIM (56.7x48).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 200 µA
- Input Capacitance (Cies) @ Vce
- 6523 pF @ 20 V
- Input
- Standard
- NTC Thermistor
- Yes
- IGBT Type
- Trench Field Stop
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Configuration
- Three Level Inverter
- Voltage - Collector Emitter Breakdown (Max)
- 1000 V
- Current - Collector (Ic) (Max)
- 100 A
- Power - Max
- 93 W
- Vce(on) (Max) @ Vge, Ic
- 2.4V @ 15V, 100A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- 36-PIM (56.7x48)
- Packaging
- Tray
- Base Product Number
- NXH200
Documentation and references
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