Component information
NXH200T120H3Q2F2STG
onsemi NXH200T120H3Q2F2STG: IGBT Modules. Package / Case: Module. Supplier Device Package: 56-PIM/Q2PACK (93x47).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- onsemi
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500 µA
- Input Capacitance (Cies) @ Vce
- 35.615 nF @ 25 V
- Input
- Standard
- NTC Thermistor
- No
- IGBT Type
- Trench Field Stop
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Configuration
- Half Bridge
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Current - Collector (Ic) (Max)
- 330 A
- Power - Max
- 679 W
- Vce(on) (Max) @ Vge, Ic
- 2.3V @ 15V, 200A
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Supplier Device Package
- 56-PIM/Q2PACK (93x47)
- Packaging
- Tray
- Base Product Number
- NXH200
Documentation and references
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