Component information
NXH50C120L2C2ES1G
onsemi NXH50C120L2C2ES1G: IGBT Modules. Package / Case: 26-PowerDIP Module (1.199", 47.20mm). Supplier Device Package: 26-DIP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 250 µA
- Input Capacitance (Cies) @ Vce
- 11.89 nF @ 20 V
- Input
- Three Phase Bridge Rectifier
- NTC Thermistor
- Yes
- Configuration
- Three Phase Inverter with Brake
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Current - Collector (Ic) (Max)
- 50 A
- Power - Max
- 20 mW
- Vce(on) (Max) @ Vge, Ic
- 2.4V @ 15V, 50A
- Mounting Type
- Through Hole
- Package / Case
- 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package
- 26-DIP
- Packaging
- Tube
- Base Product Number
- NXH50
Documentation and references
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