Component information
NXH50M65L4C2ESG
onsemi NXH50M65L4C2ESG: IGBT Modules. Package / Case: 27-PowerDIP Module (1.858", 47.20mm). Supplier Device Package: 27-DIP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; IGBT Modules
- Manufacturer
- onsemi
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 250 µA
- Input Capacitance (Cies) @ Vce
- 2.608 nF @ 20 V
- Input
- Single Phase Bridge Rectifier
- NTC Thermistor
- Yes
- Configuration
- Three Phase Inverter
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Current - Collector (Ic) (Max)
- 50 A
- Power - Max
- 20 mW
- Vce(on) (Max) @ Vge, Ic
- 2.2V @ 15V, 75A
- Mounting Type
- Through Hole
- Package / Case
- 27-PowerDIP Module (1.858", 47.20mm)
- Supplier Device Package
- 27-DIP
- Packaging
- Tube
- Base Product Number
- NXH50
Documentation and references
Documentation can be discussed with your inquiry.
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