Component information

NXV10V125DT1

onsemi NXV10V125DT1: FET, MOSFET Arrays. Package / Case: 21-PowerDIP Module (1.370", 34.80mm). Supplier Device Package: APM21-CGA.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Manufacturer
onsemi
Part Status
Active
Gate Charge (Qg) (Max) @ Vgs
101nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
6970pF @ 50V
Operating Temperature
175°C (TJ)
Grade
Automotive
Technology
MOSFET (Metal Oxide)
Qualification
AEC-Q101
Configuration
6 N-Channel (Three Phase Inverter)
Drain to Source Voltage (Vdss)
100V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 80A, 12V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Mounting Type
Through Hole
Package / Case
21-PowerDIP Module (1.370", 34.80mm)
Supplier Device Package
APM21-CGA
Packaging
Tube

Documentation and references

Manufacturer datasheet ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number
Chat on WhatsApp