Component information
PBDTC123JTH-QR
Nexperia USA Inc. PBDTC123JTH-QR: Single, Pre-Biased Bipolar Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: TO-236AB.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA
- Frequency - Transition
- 245 MHz
- Power - Max
- 250 mW
- Transistor Type
- NPN - Pre-Biased
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistor - Base (R1)
- 2.2 kOhms
- Resistor - Emitter Base (R2)
- 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 230 @ 10mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- TO-236AB
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
Documentation and references
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