Component information
PBSS4140DPN/DG/B2,115
Nexperia USA Inc. PBSS4140DPN/DG/B2,115: Bipolar Transistor Arrays. Package / Case: SOT-23-6 Thin, TSOT-23-6. Supplier Device Package: 6-TSOP.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 300 @ 500mA, 5V / 300 @ 100mA, 5V
- Power - Max
- 600mW
- Frequency - Transition
- 150MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 1A
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 40V
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max)
- 100nA
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- 6-TSOP
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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