Component information
PBSS5112PAP,115
Nexperia USA Inc. PBSS5112PAP,115: Bipolar Transistor Arrays. Package / Case: 6-UDFN Exposed Pad. Supplier Device Package: 6-HUSON (2x2).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 190 @ 100mA, 2V
- Power - Max
- 510mW
- Frequency - Transition
- 100MHz
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 2 PNP
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 1A
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 120V
- Vce Saturation (Max) @ Ib, Ic
- 480mV @ 100mA, 1A
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Supplier Device Package
- 6-HUSON (2x2)
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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