Component information
PBSS5160PAPSX
PBSS5160PAPSX component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- Power - Max
- 370mW
- Manufacturer
- Nexperia USA Inc.
- Frequency - Transition
- 125MHz
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Operating Temperature
- 150°C (TJ)
- Part Status
- Active
- Grade
- Automotive
- Transistor Type
- 2 PNP (Dual)
- Qualification
- AEC-Q100
- Current - Collector (Ic) (Max)
- 1A
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 60V
- Package / Case
- 6-UDFN Exposed Pad
- Vce Saturation (Max) @ Ib, Ic
- 550mV @ 50mA, 1A
- Supplier Device Package
- DFN2020D-6
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Base Product Number
- PBSS5160
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 500mA, 2V
Documentation and references
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