Component information
PDTA123YQBZ
Nexperia USA Inc. PDTA123YQBZ: Single, Pre-Biased Bipolar Transistors. Package / Case: 3-XDFN Exposed Pad. Supplier Device Package: DFN1110D-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- Resistor - Emitter Base (R2)
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA
- Transistor Type
- PNP - Pre-Biased
- Frequency - Transition
- 180 MHz
- Current - Collector (Ic) (Max)
- 100 mA
- Power - Max
- 340 mW
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 2.2 kOhms
- Mounting Type
- Surface Mount, Wettable Flank
- Package / Case
- 3-XDFN Exposed Pad
- Supplier Device Package
- DFN1110D-3
- Packaging
- Tape & Reel (TR)
Documentation and references
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