Component information
PDTB123ET,215
PDTB123ET,215 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Resistor - Emitter Base (R2)
- 2.2 kOhms
- Manufacturer
- Nexperia USA Inc.
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 50mA, 5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 2.5mA, 50mA
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Transistor Type
- PNP - Pre-Biased
- Power - Max
- 250 mW
- Current - Collector (Ic) (Max)
- 500 mA
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Resistors Included
- R1 and R2
- Supplier Device Package
- TO-236AB
- Resistor - Base (R1)
- 2.2 kOhms
- Base Product Number
- PDTB123
Documentation and references
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