Component information
PDTC143XQA147
NXP USA Inc. PDTC143XQA147: Single, Pre-Biased Bipolar Transistors. Package / Case: 3-XDFN Exposed Pad. Supplier Device Package: DFN1010D-3.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- NXP USA Inc.
- Series
- PDTC143XQA
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 1µA
- Frequency - Transition
- 230 MHz
- Power - Max
- 280 mW
- Transistor Type
- NPN - Pre-Biased
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100 mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 4.7 kOhms
- Resistor - Emitter Base (R2)
- 10 kOhms
- Mounting Type
- Surface Mount
- Package / Case
- 3-XDFN Exposed Pad
- Supplier Device Package
- DFN1010D-3
- Packaging
- Bulk
Documentation and references
Documentation can be discussed with your inquiry.
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