Component information
PDTD123ET,215
PDTD123ET,215 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 50mA, 5V
- Manufacturer
- Nexperia USA Inc.
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 2.5mA, 50mA
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Current - Collector Cutoff (Max)
- 500nA
- Part Status
- Active
- Power - Max
- 250 mW
- Transistor Type
- NPN - Pre-Biased
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 500 mA
- Qualification
- AEC-Q100
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Mounting Type
- Surface Mount
- Resistors Included
- R1 and R2
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Resistor - Base (R1)
- 2.2 kOhms
- Supplier Device Package
- TO-236AB
- Resistor - Emitter Base (R2)
- 2.2 kOhms
- Base Product Number
- PDTD123
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ