PMDPB30XNAX

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Nexperia USA Inc.

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

619pF @ 10V

Power - Max

640mW (Ta), 11W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

2 N-Channel (Dual)

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 12A (Tc)

Rds On (Max) @ Id, Vgs

34mOhm @ 4.5A, 4.5V

Mounting Type

Surface Mount

Package / Case

6-UFDFN Exposed Pad

Supplier Device Package

6-HUSON (2x2)

Packaging

Tape & Reel (TR); Cut Tape (CT)