Component information
PMDT290UNE,115
PMDT290UNE,115 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 950mV @ 250µA
- Manufacturer
- Nexperia USA Inc.
- Gate Charge (Qg) (Max) @ Vgs
- 0.68nC @ 4.5V
- Series
- TrenchMOS™
- Input Capacitance (Ciss) (Max) @ Vds
- 83pF @ 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 500mW
- Part Status
- Not For New Designs
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Grade
- Automotive
- Configuration
- 2 N-Channel (Dual)
- Qualification
- AEC-Q101
- FET Feature
- Logic Level Gate
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20V
- Package / Case
- SOT-563, SOT-666
- Current - Continuous Drain (Id) @ 25°C
- 800mA
- Supplier Device Package
- SOT-666
- Rds On (Max) @ Id, Vgs
- 380mOhm @ 500mA, 4.5V
- Base Product Number
- PMDT290
Documentation and references
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