Component information
PMFPB8032XP,115
PMFPB8032XP,115 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Gate Charge (Qg) (Max) @ Vgs
- 8.6 nC @ 4.5 V
- Mfr
- Nexperia USA Inc.
- Vgs (Max)
- ±12V
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- 550 pF @ 10 V
- Part Status
- Obsolete
- FET Feature
- Schottky Diode (Isolated)
- FET Type
- P-Channel
- Power Dissipation (Max)
- 485mW (Ta), 6.25W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 20 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 2.7A (Ta)
- Supplier Device Package
- 6-HUSON (2x2)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V
- Package / Case
- 6-UFDFN Exposed Pad
- Rds On (Max) @ Id, Vgs
- 102mOhm @ 2.7A, 4.5V
- Base Product Number
- PMFPB8032
- Vgs(th) (Max) @ Id
- 1V @ 250µA
Documentation and references
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