PMGD290UCEAH

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Nexperia USA Inc.

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V, 1.14nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

Power - Max

280mW (Ta), 990mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

N and P-Channel

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

725mA (Ta), 500mA (Ta)

Rds On (Max) @ Id, Vgs

380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA, 1.3V @ 250µA

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP

Packaging

Tape & Reel (TR); Cut Tape (CT)