Component information
PMGD290XN,115
PMGD290XN,115 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 350mOhm @ 200mA, 4.5V
- Manufacturer
- Nexperia USA Inc.
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Series
- TrenchMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 0.72nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 34pF @ 20V
- Part Status
- Not For New Designs
- Power - Max
- 410mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Drain to Source Voltage (Vdss)
- 20V
- Supplier Device Package
- 6-TSSOP
- Current - Continuous Drain (Id) @ 25°C
- 860mA
- Base Product Number
- PMGD290
Documentation and references
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