Component information
PMGD780SN,115
PMGD780SN,115 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 920mOhm @ 300mA, 10V
- Manufacturer
- Nexperia USA Inc.
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Series
- TrenchMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 1.05nC @ 10V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 23pF @ 30V
- Part Status
- Not For New Designs
- Power - Max
- 410mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- 2 N-Channel (Dual)
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Drain to Source Voltage (Vdss)
- 60V
- Supplier Device Package
- 6-TSSOP
- Current - Continuous Drain (Id) @ 25°C
- 490mA
- Base Product Number
- PMGD780
Documentation and references
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