Component information

PMV213SN,215

PMV213SN,215 component information and product attributes.

Product information

Manufacturer
Nexperia USA Inc.
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
4V @ 1mA
Mfr
Nexperia USA Inc.
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Series
TrenchMOS™
Vgs (Max)
±30V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 20 V
Part Status
Active
Power Dissipation (Max)
280mW (Tj)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
TO-236AB
Current - Continuous Drain (Id) @ 25°C
1.9A (Tc)
Package / Case
TO-236-3, SC-59, SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
PMV213
Rds On (Max) @ Id, Vgs
250mOhm @ 500mA, 10V

Documentation and references

Reference document ↗

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