Component information

PMZB600UNEYL

PMZB600UNEYL component information and product attributes.

Product information

Manufacturer
Nexperia USA Inc.
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
950mV @ 250µA
Mfr
Nexperia USA Inc.
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±8V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
21.3 pF @ 10 V
FET Type
N-Channel
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)
Supplier Device Package
DFN1006B-3
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Package / Case
3-XFDFN
Rds On (Max) @ Id, Vgs
620mOhm @ 600mA, 4.5V
Base Product Number
PMZB600

Documentation and references

Reference document ↗

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