Component information
PQMD12Z
Nexperia USA Inc. PQMD12Z: Bipolar Transistor Arrays, Pre-Biased. Package / Case: 6-XFDFN Exposed Pad. Supplier Device Package: DFN1010B-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 230MHz, 180MHz
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Power - Max
- 350mW
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 47kOhms
- Resistor - Emitter Base (R2)
- 47kOhms
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Supplier Device Package
- DFN1010B-6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- PQMD12
Documentation and references
Documentation can be discussed with your inquiry.
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