Component information
PQMD3Z
Nexperia USA Inc. PQMD3Z: Bipolar Transistor Arrays, Pre-Biased. Package / Case: 6-XFDFN Exposed Pad. Supplier Device Package: DFN1010B-6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Nexperia USA Inc.
- Part Status
- Active
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)
- 1µA
- Frequency - Transition
- 230MHz, 180MHz
- Power - Max
- 230mW
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 10kOhms
- Resistor - Emitter Base (R2)
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 5mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Supplier Device Package
- DFN1010B-6
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- PQMD3
Documentation and references
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