Component information
PSMN102-200Y,115
PSMN102-200Y,115 component information and product attributes.
Product information
- Manufacturer
- Nexperia USA Inc.
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Mfr
- Nexperia USA Inc.
- Gate Charge (Qg) (Max) @ Vgs
- 30.7 nC @ 10 V
- Series
- TrenchMOS™
- Vgs (Max)
- ±20V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1568 pF @ 30 V
- Part Status
- Active
- Power Dissipation (Max)
- 113W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 200 V
- Supplier Device Package
- LFPAK56, Power-SO8
- Current - Continuous Drain (Id) @ 25°C
- 21.5A (Tc)
- Package / Case
- SC-100, SOT-669
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Base Product Number
- PSMN102
- Rds On (Max) @ Id, Vgs
- 102mOhm @ 12A, 10V
Documentation and references
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