PSMN1R5-30BLEJ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

228 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14934 pF @ 15 V

FET Type

N-Channel

Power Dissipation (Max)

401W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 25A, 10V

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

PSMN1R5