Component information
PSMN4R8-100BSEJ
Nexperia USA Inc. PSMN4R8-100BSEJ: Single FETs, MOSFETs. Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. Supplier Device Package: D2PAK.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Nexperia USA Inc.
- Part Status
- Active
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 278 nC @ 10 V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 14400 pF @ 50 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 405W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss)
- 100 V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 4.8mOhm @ 25A, 10V
- Mounting Type
- Surface Mount
- Supplier Device Package
- D2PAK
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- PSMN4R8
Documentation and references
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